Geckos are famous for the skill of switchable adhesion that they use to stick on various surface while keep their fingers super clean. In the dissertation, a unique mechanism was discovered to explain gecko self-cleaning phenomena. Using atomic force microscopy (AFM), we managed to compare the microparticle-substrate adhesion and the microparticle-seta adhesion with a single seta bonded to the AFM cantilever. A dynamic effect was approved that high pulling-off speed could increase the microparticle-substrate adhesion and thus the self-cleaning appears at high moving speed. Based on the self-cleaning theory, a gecko-inspired N-doped graphene surface with switchable adhesion was achieved, which was designed into a bio-inspired micromanipulator with a success rate over 90%. When electrical bias was applied on this biomimetic surface, the charge concentration induced an electrical double layer (ELD) on the convex surfaces, which attracts polar water molecules to form a water bridge on it, significantly enhancing the adhesion on the wrinkled graphene surface, mimicking the capillary force on beetle feet. Therefore, the bio-inspired adhesive surface can be controlled with speed, electrical bias, humidity and different material surfaces. The water attraction phenomenon on the polarized surface was further tested for the potential application of water collection and evaporation in …

Methylsilsesquioxane (MSQ) and organosilicate glass (OSG) are the materials under this study because they exhibit the dielectric constant values necessary for future IC technology requirements. Obtaining a low-k dielectric value is critical for the IC industry in order to cope time delay and cross talking issues. These materials exhibit attractive dielectric value, but there are problems replacing conventional SiO2, because of their chemical, mechanical and electrical instability after plasma processing. Several techniques have been suggested to mitigate process damage but supercritical silylation offers a rapid single repair step solution to this problem. Different ash and etch damaged samples were employed in this study to optimize an effective method to repair the low-k dielectric material and seal the surface pores via supercritical fluid processing with various trialkylchlorosilanes. Fourier transform infrared spectroscopy (FTIR), contact angle, capacitance- voltage measurements, and x-ray photoemission spectroscopy, dynamic secondary ion mass spectroscopy (DSIMS), characterized the films. The hydrophobicity and dielectric constant after exposure to elevated temperatures and ambient conditions were monitored and shown to be stable. The samples were treated with a series of silylating agents of the form R3-Si-Cl where R is an alkyl groups (e.g. ethyl, propyl, isopropyl). Reactivity with the surface hydroxyls was inversely …

One of the final steps in fabricating microelectromechanical devices often involves a liquid etch release process. Capillary forces during the liquid evaporation stage after the wet etch process can pull two surfaces together resulting in adhesion of suspended microstructures to the supporting substrate. This release related adhesion can greatly reduce yields. In this report, a wet etch release method that uses polystyrene microspheres in the final rinse liquid is investigated. The polystyrene microspheres act as physical barriers between the substrate and suspended microstructures during the final liquid evaporation phase. A plasma ashing process is utilized to completely remove the polystyrene microspheres from the microstructure surfaces. Using this process, release yields > 90% were achieved. It is found that the surface roughness of gold surfaces increases while that of the silicon is reduced due to a thin oxide that grows on the silicon surface during the plasma process.

The thesis studied quantized conductance in nanocontacts formed between two thin gold wires with one of the wires coated by alkainthiol self assembly monolayers (SAM), by using the cross-wire junction. Using the Lorenz force as the driving force, we can bring the two wires in contact in a controlled manner. We observed conductance with steps of 2e2 / h. The conductance plateaus last several seconds. The stability of the junction is attributed to the fact that the coating of SAM improves the stability and capability of the formed contact.

Ruthenium and ruthenium dioxide thin films have shown great promise in various applications, such as thick film resistors, buffer layers for yttrium barium copper oxide (YBCO) superconducting thin films, and as electrodes in ferroelectric memories. Other potential applications in Si based complementary metal oxide semiconductor (CMOS) devices are currently being studied. The search for alternative metal-based gate electrodes as a replacement of poly-Si gates has intensified during the last few years. Metal gates are required to maintain scaling and performance of future CMOS devices. Ru based materials have many desirable properties and are good gate electrode candidates for future metal-oxide-semiconductor (MOS) device applications. Moreover, Ru and RuO2 are promising candidates as diffusion barriers for copper interconnects. In this thesis, the thermal stability and interfacial diffusion and reaction of both Ru and RuO2 thin films on HfO2 gate dielectrics were investigated using Rutherford backscattering spectrometry (RBS), X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). An overview of Ru and RuO2/HfO2 interface integrity issues will be presented. In addition, the effects of C ion modification of RuO2 thin films on the physico-chemical and electrical properties are evaluated.

The incorporation of fluorine into SiO2 has been shown to reduce the dielectric constant of the existing materials by reducing the electrical polarizability. However, the incorporation of fluorine has also been shown to decrease film stability. Therefore, new efforts have been made to find different ways to further decrease the relative dielectric constant value of the existing low-k materials. One way to reduce the dielectric constant is by decreasing its density. This reduces the amount of polarizable materials. A good approach is increasing porosity of the film. Recently, fluorinated silica xerogel films have been identified as potential candidates for applications such as interlayer dielectric materials in CMOS technology. In addition to their low dielectric constants, these films present properties such as low refractive indices, low thermal conductivities, and high surface areas. Another approach to lower k is incorporating lighter atoms such as hydrogen or carbon. Silsesquioxane based materials are among them. However, additional integration issues such as damage to these materials caused by plasma etch, plasma ash, and wet etch processes are yet to be overcome. This dissertation reports the effects of triethoxyfluorosilane-based (TEFS) xerogel films when reacted with silylation agents. TEFS films were employed because they form robust silica …

Through a series of carefully designed experiments, characterization and some modeling tools, this work is aimed at studying the role of thermal profiles on different microstructural zones and associated properties like strength and corrosion through a variation of weld parameters, thermal boundary conditions and material temper. Two different alloys belonging to the Al-Cu and Al-Cu-Li system in different temper conditions- peak aged (T8) and annealed (O) were used. A 3D-thermal pseudo mechanical (TPM) model is developed for the FSW process using heat transfer module in COMSOL Multiphysics and is based on a heat source wherein the temperature dependent yield shear stress is used for the heat generation. The precipitation and coarsening model is based on the Kampmann and Wagner theoretical framework and accounts for the competition between the various nucleation sites for both metastable and equilibrium precipitates. The model predicts different precipitate mean radius and volume fraction for the various zones in the friction stir welded material. A model for the yield strength is developed which considers contributions from different strengthening mechanisms. The predictions of the each models have been verified against experimental data and literature. At constant advance per rotation, the peak temperature decreases with a decrease in traverse …

Recent progress in layered transition metal dichalcogenides (TMDs) has led to various promising electronic and optoelectronic applications. However, the structure of materials plays a critical role in electronic and optoelectronic devices, and determines performance. Electronic and optoelectronic devices typically consist of multiple layers that form electrical homojunctions or heterojunctions. Therefore, in a device it can be expected that a WS2 layer may serve as the substrate for a subsequent layer in a multilayer device stack and determine how the layer grows. In transistor structures, roughness at the channel/gate dielectric interface introduces field variations and charge scattering. Therefore, understanding the relations between processing, surface morphology and properties is important. In this project, the effects of pulsed laser deposition (PLD) processing conditions on the surface morphology of few layered WS2 films were studied. WS2 films were synthesized under processing conditions that represent the extremes of surface supersaturation and kinetic energy transfer from the flux to the growing films, and evolution of the surface morphology was studied. The specific conditions were 1Hz/50mJ, 10Hz/50mJ, 1Hz/300mJ, and 10Hz/300mJ respectively. Combining AFM, XRD and Raman analyses, it was determined that deposition at 10Hz/300mJ, provided the best structural properties and surface morphology. Growth appeared to be 3D-cluster, …