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0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1-eV)/GaInAs(0.7-eV) Four-Junction Solar Cell: Preprint (open access)

0.7-eV GaInAs Junction for a GaInP/GaAs/GaInAs(1-eV)/GaInAs(0.7-eV) Four-Junction Solar Cell: Preprint

We discuss recent developments in III-V multijunction solar cells, focusing on adding a fourth junction to the Ga0.5In0.5P/GaAs/Ga0.75In0.25As inverted three-junction cell. This cell, grown inverted on GaAs so that the lattice-mismatched Ga0.75In0.25As third junction is the last one grown, has demonstrated 38% efficiency, and 40% is likely in the near future. To achieve still further gains, a lower-bandgap GaxIn1-xAs fourth junction could be added to the three-junction structure for a four-junction cell whose efficiency could exceed 45% under concentration. Here, we present the initial development of the GaxIn1-xAs fourth junction. Junctions of various bandgaps ranging from 0.88 to 0.73 eV were grown, in order to study the effect of the different amounts of lattice mismatch. At a bandgap of 0.88 eV, junctions were obtained with very encouraging {approx}80% quantum efficiency, 57% fill factor, and 0.36 eV open-circuit voltage. The device performance degrades with decreasing bandgap (i.e., increasing lattice mismatch). We model the four-junction device efficiency vs. fourth junction bandgap to show that an 0.7-eV fourth-junction bandgap, while optimal if it could be achieved in practice, is not necessary; an 0.9-eV bandgap would still permit significant gains in multijunction cell efficiency while being easier to achieve than the lower-bandgap junction.
Date: May 1, 2006
Creator: Friedman, D. J.; Geisz, J. F.; Norman, A. G.; Wanlass, M. W. & Kurtz, S. R.
Object Type: Article
System: The UNT Digital Library
0.25mm-Thick CCD Packaging for the Dark Energy Survey Camera Array (open access)

0.25mm-Thick CCD Packaging for the Dark Energy Survey Camera Array

Abstract: The Dark Energy Survey Camera focal plane array will consist of 62 2k x 4k CCDs with a pixel size of 15 microns and a silicon thickness of 250 microns for use at wavelengths between 400 and 1000 nm. Bare CCD die will be received from the Lawrence Berkeley National Laboratory (LBNL). At the Fermi National Accelerator Laboratory, the bare die will be packaged into a custom back-side-illuminated module design. Cold probe data from LBNL will be used to select the CCDs to be packaged. The module design utilizes an aluminum nitride readout board and spacer and an Invar foot. A module flatness of 3 microns over small (1 sqcm) areas and less than 10 microns over neighboring areas on a CCD are required for uniform images over the focal plane. A confocal chromatic inspection system is being developed to precisely measure flatness over a grid up to 300 x 300 mm. This system will be utilized to inspect not only room-temperature modules, but also cold individual modules and partial arrays through flat dewar windows.
Date: 2006-06~
Creator: Derylo, Greg; Diehl, H. Thomas & Estrada, Juan
Object Type: Article
System: The UNT Digital Library