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Classical Simulations of the Drift of Magnetobound States of Positronium (open access)

Classical Simulations of the Drift of Magnetobound States of Positronium

The production and control of antihydrogen at very low temperatures provided a key tool to test the validity for the antimaterial of the fundamental principles of the interactions of nature such as the weak principle of equivalence (WEP), and CPT symmetry (Charge, Parity, and Time reversal). The work presented in this dissertation studies the collisions of electrons and positrons in strong magnetic fields that generate magnetobound positronium (positron-electron system temporarily bound due to the presence of a magnetic field) and its possible role in the generation of antihydrogen.
Date: August 2021
Creator: Aguirre Farro, Franz
System: The UNT Digital Library

Developing Ultra-Fast Plasmonic Spiking Neuron via Integrated Photonics

This research provides a proof of concept and background theory for the physics behind the state-of-the-art ultra-fast plasmonic spiking neurons (PSN), which can serve as a primary synaptic device for developing a platform for fast neural computing. Such a plasmonic-powered computing system allows localized AI with ultra-fast operation speed. The designed architecture for a plasmonic spiking neuron (PSN) presented in this thesis is a photonic integrated nanodevice consisting of two electro-optic and optoelectronic active components and works based on their coupling. The electro-optic active structure incorporated a periodic array of seeded quantum nanorods sandwiched between two electrodes and positioned at a near-field distance from the topmost metal layer of a sub-wavelength metal-oxide multilayer metamaterial. Three of the metal layers of the metamaterials form the active optoelectronic component. The device operates based on the coupling of the two active components through optical complex modes supported by the multilayer and switching between two of them. Both action and resting potentials occur through subsequent quantum and extraordinary photonics phenomena. These phenomena include the generation of plasmonic high-k complex modes, switching between the modes by enhanced quantum-confined stark effect, decay of the plasmonic excitations in each metal layer into hot-electrons, and collecting hot-electrons by …
Date: August 2022
Creator: Goudarzi, Abbas, Sr.
System: The UNT Digital Library
The Electrochemical Etching Process of a Tungsten Wire (open access)

The Electrochemical Etching Process of a Tungsten Wire

This study produced and analyzed shaped tungsten wire tips formed through electrochemical etching. Specifically, the cone length and the radius of curvature of the tip were analyzed. Having the tips move dynamically through an electrolytic solution, such as potassium hydroxide, and tuning the initial starting depth of the tungsten wire along with the dynamic speed of the tungsten wire as it passed throughout the solution allowed various types of tip profiles to be produced. The tip's radius of curvature was able to be reproduced with an accuracy between 88 - 92 %. The method provided would be applicable for the production of various styles of liquid-metal ion source (LMIS) probes and scanning probe microscope (SPM) tips.
Date: August 2021
Creator: Richardson, Aaron Michael
System: The UNT Digital Library

Low-Energy Electron Irradiation of 2D Graphene and Stability Investigations of 2D MoS2

In this work, we demonstrate the mechanism for etching exfoliated graphene on SiO2 and other technological important substrates (Si, SiC and ITO), using low-energy electron sources. Our mechanism is based on helium ion sputtering and vacancy formation. Helium ions instead of incident electrons cause the defects that oxygen reacts with and etches graphene. We found that etching does not occur on low-resistivity Si and ITO. Etching occurs on higher resistivity Si and SiC, although much less than on SiO2. In addition, we studied the degradation mechanism of MoS2 under ambient conditions using as-grown and preheated mono- and thicker-layered MoS2 films. Thicker-layered MoS2 do not exhibit the growth of dendrites that is characteristic of monolayer degradation. Dendrites are observed to stop at the monolayer-bilayer boundary. Raman and photoluminescence spectra of the aged bilayer and thicker-layered films are comparable to those of as-grown films. We found that greater stability of bilayers and thicker layers supports a previously reported mechanism for monolayer degradation involving Förster resonance energy transfer. As a result, straightforward and scalable 2D materials integration, or air stable heterostructure device fabrication may be easily achieved. Our proposed mechanisms for etching graphene and ambient degradation of MoS2 could catalyze research on realizing …
Date: August 2021
Creator: Femi Oyetoro, John Dideoluwa
System: The UNT Digital Library
Scaling, Power-Law First Return Times, and Non-Ergodicity (open access)

Scaling, Power-Law First Return Times, and Non-Ergodicity

This dissertation is a collection of papers on anomalous phenomena in physics, biology, and sociology. These phenomena are primarily analyzed in terms of their temporal and spatiotemporal statistical properties. The analysis is based on both numerical simulations and, in some cases, real-world physiological and sociological data. The primary methods of analysis are diffusion entropy analysis, power spectral analysis, multifractal analysis, and survival (or waiting-time) analysis.
Date: August 2022
Creator: Lambert, David Robert
System: The UNT Digital Library
A Study of Anomalous Conduction in n-Type Amorphous Silicon and Correlations in Conductivity and Noise in Gold Nanoparticle-Ligand Arrays (open access)

A Study of Anomalous Conduction in n-Type Amorphous Silicon and Correlations in Conductivity and Noise in Gold Nanoparticle-Ligand Arrays

This work explores two very different structural systems: n-type hydrogenated amorphous silicon (a-Si:H) and gold nanoparticles (AuNPs) suspended in a matrix of organic ligands. For a-Si:H, examination of the gas-phase concentration of dopant (1-6% PH3/SiH4) and argon diluent effects includes the temperature dependent conductivity, low-frequency electronic noise, and Raman spectroscopy to examine structure. It is found that a-Si:H samples grown with high dopant concentration or with argon dilution exhibit an anomalous hopping conduction mechanism with an exponent of p=0.75. An experimental approach is used to determine correlations between conduction parameters, such as the pre-exponential factor and the characteristic temperature, rather than an analysis of existing models to explain the anomalous conduction. From these results, the anomalous conduction is a result of a change in the shape of the density of states and not a shift of the Fermi level with dopant. Additionally, it is found that argon dilution increases the carrier mobility, reduces the doping efficiency, and causes a degradation of the short-range order. With AuNPs, a comparison of temperature dependent conductivity and low-frequency noise shows that the temperature coefficient of resistance (TCR) is independent of the length of interparticle distance while the noise magnitude decreases.
Date: August 2021
Creator: Western, Brianna J
System: The UNT Digital Library

Synthesis, Modification, and Analysis of Silicate Cosmic Dust Analogues Using Ion-Beam Techniques

Silicates analogous to cosmic dust were synthesized, modified, and analyzed utilizing ion-beam techniques with Rutherford backscattering spectrometry (RBS) and x-ray diffraction (XRD). Silicate dust is a common constituent in interstellar space, with an estimated 50% of dust produced in the stellar winds of M class Asymptotic Giant Branch (AGB) stars. Silicate dust acts as a surface upon which other chemicals may form (water ice for example), increasing significance in the cosmochemistry field, as well as laboratory astrophysics. Silicate formation in the stellar winds of AGB stars was simulated in the laboratory environment. Three sequential ion implantations of Fe-, MgH2-, and O- with thermal annealing were used to synthesize a mixture appropriate to silicate dust in the surface layers of a p-type Si substrate. Post implantation He+ irradiation was shown to preferentially induce crystalline formation in the analogue prior to thermal annealing. This effect is believed to originate in the ion-electron interaction in the Si substrate. The effects of ionization and ion energy loss due to electronic stopping forces is believed to precipitate nucleation in the amorphous media. For annealing temperatures of 1273 K, predominant quartz formation was found in the substrate, whereas lower annealing temperatures of 1000 K formed enstatite …
Date: August 2020
Creator: Young, Joshua Michael
System: The UNT Digital Library