Establishing Site X: Letter, Arthur H. Compton to Enrico Fermi, September 14, 1942 (open access)

Establishing Site X: Letter, Arthur H. Compton to Enrico Fermi, September 14, 1942

This letter from Compton to Fermi describes developments bearing on the establishment of ``site X`` (which, as of the letter date, is definitely determined as at the Tennessee Valley) for the construction of a pile and associated pilot plant buildings, describes the situation as of the letter date, and offers counsel as to how to proceed.
Date: September 14, 1942
Creator: Compton, A. H.
System: The UNT Digital Library
Formation of the 50-Year Element 94 from Deuteron Bombardment of U$sup 23$$sup 8$ (open access)

Formation of the 50-Year Element 94 from Deuteron Bombardment of U$sup 23$$sup 8$

None
Date: June 1, 1942
Creator: Kennedy, J.W.; Perlman, M.L.; Segre, E. & Wahl, A.C.
System: The UNT Digital Library
Progress Report on Contract OEMsr-290. Supplement 2 (open access)

Progress Report on Contract OEMsr-290. Supplement 2

None
Date: October 1, 1942
Creator: Kraus, C. A.
System: The UNT Digital Library
Purification of Uranium Oxide (open access)

Purification of Uranium Oxide

None
Date: April 21, 1942
Creator: Hoffman, J.I.
System: The UNT Digital Library
Search for Elements 94 and 93 in Nature. Presence of 94$sup 239$ in Pitchblende (open access)

Search for Elements 94 and 93 in Nature. Presence of 94$sup 239$ in Pitchblende

None
Date: April 13, 1942
Creator: Seaborg, G. T. & Perlman, M. L.
System: The UNT Digital Library
[Study of Factors Which Influence the Rate of Reaction Between UO3 CCl4. Progress Report] (open access)

[Study of Factors Which Influence the Rate of Reaction Between UO3 CCl4. Progress Report]

None
Date: December 15, 1942
Creator: Kraus, C. A.
System: The UNT Digital Library
Theory of High Frequency Rectification by Silicon Crystals (open access)

Theory of High Frequency Rectification by Silicon Crystals

The excellent performance of British ''red dot'' crystals is explained as due to the knife edge contact against a polished surface. High frequency rectification depends critically on the capacity of the rectifying boundary layer of the crystal. C. For high conversion efficiency, the product of this capacity and of the ''forward'' (bulk) resistance R{sub b} of the crystal must be small. For a knife edge, this product depends primarily on the breadth of the knife edge and very little upon its length. The contact can therefore have a rather large area which prevents burn-out. For a wavelength of 10 cm. the computations show that the breadth of the knife edge should be less than about 10{sup -3} cm. For a point contact the radius must be less than 1.5 x 10{sup -3} cm. and the resulting small area is conductive to burn-out. The effect of ''tapping'' is probably to reduce the area of contact.
Date: October 29, 1942
Creator: Bethe, H. A.
System: The UNT Digital Library