Copper under-potential deposition (UPD) on iridium was studied due to important implications it presents to the semiconductor industry. Copper UPD allows controlled superfilling on sub-micrometer trenches; iridium has characteristics to prevent copper interconnect penetration into the surrounding dielectric. Copper UPD is not favored on iridium oxides but data shows copper over-potential deposition when lower oxidation state Ir oxide is formed. Effect of anions in solution on silver UPD at platinum (Pt) electrodes was studied with the electrochemical quartz crystal microbalance. Silver UPD forms about one monolayer in the three different electrolytes employed. When phosphoric acid is used, silver oxide growth is identified due to presence of low coverage hydrous oxide species at potentials prior to the monolayer oxide region oxide region.

To form Cu interconnects, dual-damascene techniques like chemical mechanical planarization (CMP) and post-CMP became inevitable for removing the "overburden" Cu and for planarizing the wafer surface. During the CMP processing, Cu interconnects and barrier metal layers experience different electrochemical interactions depending on the slurry composition, pH, and ohmic contact with adjacent metal layers that would set corrosion process. Ruthenium as a replacement of existing diffusion barrier layer will require extensive investigation to eliminate or control the corrosion process during CMP and post CMP. Bimetallic corrosion process was investigated in the ammonium citrate (a complexing agent of Cu in CMP solutions) using micro test patterns and potentiodynamic measurements. The enhanced bimetallic corrosion of copper observed is due to noble behavior of the ruthenium metal. Cu formed Cu(II)-amine and Cu(II)-citrate complexes in alkaline and acidic solutions and a corrosion mechanism has been proposed. The currently used metallization process (PVD, CVD and ALD) require ultra-high vacuum and are expensive. A novel method of Si surface metallization process is discussed that can be achieved at room temperature and does not require ultra-high vacuum. Ruthenation of Si surface through strong Si-Ru covalent bond formation is demonstrated using different ruthenium carbonyl compounds. RBS analysis accounted for …