Degree Department

Language

Plasmonically-powered hot carrier induced modulation of light emission in a two-dimensional GaAs semiconductor quantum well (open access)

Plasmonically-powered hot carrier induced modulation of light emission in a two-dimensional GaAs semiconductor quantum well

Article describes an experiment in which a hot-electron-enabled route to controlling light with dissipative loss compensation in semiconductor quantum light emitters has been realized for tunable quantum optoelectronic devices via a two-species plasmon system.
Date: December 10, 2018
Creator: Ashalley, Eric; Gryczynski, Karol; Wang, Zhiming; Salamo, Gregory & Neogi, Arup
System: The UNT Digital Library