This conference's focus was the peaceful uses of the atom and their implications for nuclear science, energy security, nuclear medicine and national security. The conference also provided the setting for the presentation of the prestigious Enrico Fermi Prize, a Presidential Award which recognizes the contributions of distinguished members of the scientific community for a lifetime of exceptional achievement in the science and technology of nuclear, atomic, molecular, and particle interactions and effects. An impressive group of distinguished speakers addressed various issues that included: the impact and legacy of the Eisenhower Administration’s “Atoms for Peace” concept, the current and future role of nuclear power as an energy source, the challenges of controlling and accounting for existing fissile material, and the horizons of discovery for particle or high-energy physics. The basic goal of the conference was to examine what has been accomplished over the past fifty years as well as to peer into the future to gain insights into what may occur in the fields of nuclear energy, nuclear science, nuclear medicine, and the control of nuclear materials.

Recent years have seen an explosion of interest in the narrow band gap end of the InGaN alloy system, particularly in InN. The existence of surface electron accumulation and a tendency for n-type conductivity have been well-established and are explained by an extremely large electron affinity and the location of the Fermi level stabilization energy (E{sub FS}) high in the conduction band [1]. These characteristics pose significant challenges to the integration of In-rich InGaN into devices and demonstrate the need for a better understanding of the relationship between native defects and electronic transport in the alloy system. It has been previously shown that high-energy particle irradiation can predictably control the electronic properties of In-rich InGaN [1]. With increasing irradiation dose, the electron concentration (n) increases and the electron mobility ({mu}) decreases until the Fermi level reaches E{sub FS}, which is the saturation point. The value of n at saturation decreases with decreasing In fraction, due to the raising of the conduction band edge with respect to E{sub FS}.