The purpose of this revision is to update the Line Item Project, 93-L-GFW-152 Functional Design Criteria (FDC) to reflect changes approved in change control M-24-91-6, Engineering Change Notices (ECNs), and expand the scope to include subsurface investigations along with the borehole drilling. This revision improves the ability and effectiveness of maintaining RCRA and Operational groundwater compliance by combining borehole and well drilling with subsurface data gathering objectives. The total projected number of wells to be installed under this project has decreased from 200 and the scope has been broadened to include additional subsurface investigation activities that usually occur simultaneously with most traditional borehole drilling and monitoring well installations. This includes borehole hydrogeologic characterization activities, and vadose monitoring. These activities are required under RCRA 40 CFR 264 and 265 and WAC 173-303 for site characterization, groundwater and vadose assessment and well placement.

Two new failure analysis techniques have been developed for backside and front side localization of open and shorted interconnections on ICs. These scanning optical microscopy techniques take advantage of the interactions between IC defects and localized heating using a focused infrared laser ({lambda} = 1,340 nm). Images are produced by monitoring the voltage changes across a constant current supply used to power the IC as the laser beam is scanned across the sample. The methods utilize the Seebeck Effect to localize open interconnections and Thermally-Induced Voltage Alteration (TIVA) to detect shorts. Initial investigations demonstrated the feasibility of TIVA and Seebeck Effect Imaging (SEI). Subsequent improvements have greatly increased the sensitivity of the TIVA/SEI system, reducing the acquisition times by more than 20X and localizing previously unobserved defects. The interaction physics describing the signal generation process and several examples demonstrating the localization of opens and shorts are described. Operational guidelines and limitations are also discussed. The system improvements, non-linear response of IC defects to heating, modeling of laser heating and examples using the improved system for failure analysis are presented.