The present work reports the experimental evidence of anomalous energy loss, energy straggling, and the corresponding ion-induced electron emission yields of channeled protons in silicon.

Knowledge of the atomic number (Zt) dependence of ion-induced electron emission yields (Y) can be the basis for a general understanding of ion-atom interaction phenomena and, in particular, for the design of Zrsensitive detectors that could be useful, for example, in the separation of isobars in accelerator mass spectrometry. The Zx dependence of ion-induced electron emission yields has been investigated using heavy ions of identical velocity (v = 2 v0, with v0 as the Bohr velocity) incident in a normal direction on sputter-cleaned carbon foils. Yields measured in this work plotted as a function of the ion's atomic number reveal an oscillatory behavior with pronounced maxima and minima. This nonmonotonic dependence of the yield on Zx will be discussed in the light of existing theories.