The Debye sheath is shown to be unstable under general conditions. For surface materials with sufficient secondary electron emission (SEE) yields, the surface's current-voltage characteristic has an unstable branch when the bulk plasma temperature (Te ) exceeds a critical value, or when there are fast electron populations present. The plasma-surface interaction becomes dynamic where the sheath may undergo spontaneous transitions or oscillations. Using particle-in-cell simulations, we analyze sheath instabilities occurring in a high Te plasma slab bounded by walls with SEE. As the plasma evolves, whenever the sheath enters an unstable state, its amplitude rapidly collapses, allowing a large flux of previously trapped electrons to hit the wall. These hot electrons induce more than one secondary on average, causing a net loss of electrons from the wall. The sheath collapse quenches when the surface charge becomes positive because the attractive field inhibits further electrons from escaping. Sheath instabilities influence the current balance, energy loss, cross-B-field transport and even the bulk plasma properties. Implications for discharges including Hall thrusters are discussed. More generally, the results show that common theories that treat emission as a fixed (time-independent) "coefficient" do not capture the full extent of SEE effects.

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The project addressed the need for improved multijunction solar cells as identified within the Solar America Initiative program. The basic Ge/InGaAs/InGaP triple-junction structure that has led to record commercial efficiencies remains unoptimized due to excess current in the germanium component. Furthermore, its deployment cannot be scaled up to terawatt-level applications due to bottlenecks related to germanium’s cost and abundance. The purpose of the program was to explore new strategies developed at Arizona State University to deposit germanium films on much cheaper silicon substrates, largely eliminating the germanium bottleneck, and at the same time to develop new materials that should lead to an improvement in multijunction efficiencies. This included the ternary alloy SiGeSn, which can be inserted as a fourth junction in a Ge/SiGeSn/InGaAs/InGaP structure to compensate for the excess current in the bottom cell. Moreover, the possibility of depositing materials containing Sn on Si substrates created an opportunity for replacing the bottom Ge cell with a GeSn alloy, which, combined with new III-V alloys for the top cells, should enable 4-junction structures with perfectly optimized band gaps. The successes of the program, to be described below, has led to the developments of new strategies for the growth of high-quality germanium …

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