Transient Temperature Distributions in a Thermally Orthotropic Plate With Non-Uniform Surface Heating (open access)

Transient Temperature Distributions in a Thermally Orthotropic Plate With Non-Uniform Surface Heating

ent temperature variation in a thermally orthotropic plate which is subjected to an arbitrary heating rate distribution along one face with all other surfaces being insulated. Dimensionless temperature histories and distributions determined from this solution are presented for the special, but representative, case of a linearly varying heating rate distribution on plates with varying degrees of thermal orthotropy. These results establish quantitatively the value of a material with high planar and low normal thermal conductivities for applications where it is desired to maintain minimum temperatures on the rear or unheated surface of a heat shield when the heated surface is subjected to a very non-uniform heating rate distribution. The applicability of simplifying assumptions in analyzing such a system is discussed. Experimental temperature measurements in a pyrolytic graphite plate heated by an oxyacetylene flame were made to verify the analytical results. Achievement of satisfactory agreement wss found to be dependent upon use of thermal property values differing from those presently available for this material. This is not unusual in that differences in production methods are known to introduce substantial property variations in anisotropic materials such as pyrolytic graphite. (auth)
Date: June 1, 1961
Creator: Hornbaker, David Ross
System: The UNT Digital Library
A Theoretical Study of the Transient Operation and Stability of Two-Phase Natural Circulation Loops (open access)

A Theoretical Study of the Transient Operation and Stability of Two-Phase Natural Circulation Loops

Mathematical models of the time-dependent behavior of two-phase natural- circulation loops were used to predict the operation and to explain the unusual instability sometimes observed. The initial results obtained for a loop similar to the Univ. of Minnesota loop were used to formulate a more complex and accurate model, and the predicted transient behavior was in close agreement with the experimental results from the Minnesota loop. For a 300psia, high-pressure loop, unstable oscillatory behavior was predicted under certain conditions and stable behavior under others. Closed unstable regions rather than limits were predicted, and the specifications of stability in terms of a single parameter were found to be impossible. The great difference in oscillatory frequencies observed at low and high pressures was found to be due largely to the system geometry. The criterion for the absence of oscillations was found to be similar to one of the criteria for stability of chemical reaction systems. (D.L.C.)
Date: June 1, 1961
Creator: Garlid, K.; Amundson, N. R. & Isbin, H. S.
System: The UNT Digital Library
Dynamic Simulation of Multi-Pass Pressurized Water Nuclear Power Plants by Analog Computer Techniques (open access)

Dynamic Simulation of Multi-Pass Pressurized Water Nuclear Power Plants by Analog Computer Techniques

A kinetic model of the primary loop of a multi-pass pressurized water reactor power plant is developed to evaluate, by analog computer techniques, the transient response characteristics under conditions of steam generator load and reactor control rod perturbations. Using the 2-pass 28 Mw(t) SM-2 reactor as a typical plant, transient behavior patterns are illustrated and examined for a variety of load inputs, variations in plant constants, and analog model simplifications. (auth)
Date: June 1, 1961
Creator: Brondel, J. O.
System: The UNT Digital Library
THE CARRIER-RECOMBINATION BEHAVIOR AND ANNEALING PROPERTIES OF RADIATION- INDUCED RECOMBINATION CENTERS IN GERMANIUM (open access)

THE CARRIER-RECOMBINATION BEHAVIOR AND ANNEALING PROPERTIES OF RADIATION- INDUCED RECOMBINATION CENTERS IN GERMANIUM

Carrier recombination and annealing of radioinduced recombination centers were investigated for both n- and ptype Ge. The experimental results are explained by a model in which recombination occurs at 0.36 ev above the valence band in gamma -irradiated, n-type Ge; the position of this level is shifted slightly downward for neutron-irradiated Ge. Trapping levels occur in As-doped Ge (at 0.17 ev above the valence band) which are not present in Sb-doped Ge. For p-type Ge, an energy level present in unirradiated Ge acts as a trapping center. A value for the electron capture cross section of n-type Ge is derived: 7 x 10/ sup -//sup 1//sup 9/ cm/sup 2/. The annealing properties of Sb- and As-doped Ge are very different. A model for the annealing results is given in which irradiation produces three major types of defects: interstitials, vacancies, and vacancy-interstitial pairs. The properties of each defect type are described. Association of vacancies with doping atoms is discussed. (D.L.C.)
Date: June 1, 1961
Creator: Curtis, O.L. Jr. & Crawford, J.H. Jr.
System: The UNT Digital Library