The problem with which this investigation is concerned is that of demonstrating the applicability of a particular theory and technique to two materials of different band structure, InSb and HgSe, and in doing so, determining the deformation potentials of these materials. The theory used in this investigation predicts an inversion-asymmetry splitting and an anisotropy of the Fermi surface under uniaxial stress. No previous studies have ever verified the existence of an anisotropy of the Fermi surface of semiconductors under stress. In this work evidence will be given which demonstrates this anisotropy. Although the inversion-asymmetry splitting parameter has been determined for some materials, no value has ever been reported for InSb. The methods presented in this paper allow a value of the splitting parameter to be determined for InSb.

Electron-ion recombination has been under study for many years, but comparisons between theory and experiment have been very difficult, especially for conditions where the ion under evaluation was a minority in concentration. This study describes a direct measurement of the recombination-rate coefficient for the recombination of minority as well as majority ions in the afterglow.