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Extraordinary Light-Trapping Enhancement in Silicon Solar Cell Patterned with Graded Photonic Super-Crystals
This article explores light-trapping enhancement in newly discovered graded photonic super-crystals (GPSCs) with dual periodicity and dual basis.
Date:
December 7, 2017
Creator:
Hassan, Safaa; Lowell, David; Adewole, Murthada; George, David; Zhang, Hualiang & Lin, Yuankun
System:
The UNT Digital Library
Plasmonically-powered hot carrier induced modulation of light emission in a two-dimensional GaAs semiconductor quantum well
Article describes an experiment in which a hot-electron-enabled route to controlling light with dissipative loss compensation in semiconductor quantum light emitters has been realized for tunable quantum optoelectronic devices via a two-species plasmon system.
Date:
December 10, 2018
Creator:
Ashalley, Eric; Gryczynski, Karol; Wang, Zhiming; Salamo, Gregory & Neogi, Arup
System:
The UNT Digital Library
Low-energy positron interactions with xenon
This article studies low-energy interactions of positrons with xenon experimentally and theoretically. Results are compared with previous literature.
Date:
December 8, 2011
Creator:
Machacek, J. R.; Makochekanwa, C.; Jones, A.C.L.; Caradonna, P.; Slaughter, D.S.; McEachran, R.P. et al.
System:
The UNT Digital Library
Continuum models of the electrochemical diffuse layer in electronic-structure calculations
This article presents a critical comparison of continuum diffuse-layer models that can be coupled to an atomistic first-principles description of the charged metal surface in order to account for the electrolyte screening at electrified interfaces.
Date:
August 31, 2018
Creator:
Nattino, Francesco; Truscott, Matthew; Marzari, Nicola & Andreussi, Oliviero
System:
The UNT Digital Library
Absorption and emission modulation in a MoS2–GaN (0001) heterostructure by interface phonon–exciton coupling
Article reporting the change in the transient absorption characteristics of monolayer MoS2 and the modified PL emission characteristics in a monolayer MoS2–GaN (0001) heterostructure due to the coupling of carriers with the phonon modes and the energy exchange at the interface. The results demonstrate the relevance of interface coupling between the semiconductors for the development of optical and electronic applications.
Date:
September 26, 2019
Creator:
Poudel, Yuba; Sławińska, Jagoda; Gopal, Priya; Seetharaman, Sairaman; Hennighausen, Zachariah; Kar, Swastik et al.
System:
The UNT Digital Library