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Electron cyclotron resonance deposition of amorphous silicon alloy films and devices
This report describes work to develop a state-of-the-art electron cyclotron resonance (ECR) plasma-enhanced chemical vapor deposition (PECVD) system. The objective was to understand the deposition processes of amorphous silicon (a-Si:H) and related alloys, with a best-effort improvement of optoelectronic material properties and best-effort stabilization of solar cell performance. ECR growth parameters were systematically and extensively investigated; materials characterization included constant photocurrent measurement (CPM), junction capacitance, drive-level capacitance profiling (DLCP), optical transmission, light and dark photoconductivity, and small-angle X-ray scattering (SAXS). Conventional ECR-deposited a-Si:H was compared to a new form, a-Si:(Xe, H), in which xenon gas was added to the ECR plasma. a-Si:(Xe,H) possessed low, stable dark conductivities and high photosensitivites. Light-soaking revealed photodegradation rates about 35% lower than those of comparable radio frequency (rf)-deposited material. ECR-deposited p-type a SiC:H and intrinsic a-Si:H films underwent evaluation as components of p-i-n solar cells with standard rf films for the remaining layers.
Date:
October 1, 1992
Creator:
Shing, Y. H. (Jet Propulsion Lab., Pasadena, CA (United States))
System:
The UNT Digital Library
Electron cyclotron resonance deposition of amorphous silicon alloy films and devices. Final subcontract report, 1 April 1991--31 March 1992
This report describes work to develop a state-of-the-art electron cyclotron resonance (ECR) plasma-enhanced chemical vapor deposition (PECVD) system. The objective was to understand the deposition processes of amorphous silicon (a-Si:H) and related alloys, with a best-effort improvement of optoelectronic material properties and best-effort stabilization of solar cell performance. ECR growth parameters were systematically and extensively investigated; materials characterization included constant photocurrent measurement (CPM), junction capacitance, drive-level capacitance profiling (DLCP), optical transmission, light and dark photoconductivity, and small-angle X-ray scattering (SAXS). Conventional ECR-deposited a-Si:H was compared to a new form, a-Si:(Xe, H), in which xenon gas was added to the ECR plasma. a-Si:(Xe,H) possessed low, stable dark conductivities and high photosensitivites. Light-soaking revealed photodegradation rates about 35% lower than those of comparable radio frequency (rf)-deposited material. ECR-deposited p-type a SiC:H and intrinsic a-Si:H films underwent evaluation as components of p-i-n solar cells with standard rf films for the remaining layers.
Date:
October 1, 1992
Creator:
Shing, Y. H.
System:
The UNT Digital Library
Electrical characterization of electrophoretically coated aluminum samples for photovoltaic concentrator application
The practicality of using a thin-film styrene/acrylate copolymer electrophoretic coating to isolate concentrator cells electrically from their surroundings in a photovoltaic concentrator module is assessed. Only the electrical isolation problem was investigated. The approach was to subject various types of EP-coated aluminum specimens to electrical stress testing and to aging tests while monitoring coating electrical resistivity properties. It was determined that, in general, longer processing times--i.e., thicker electrophoretic layers--resulted in better voltage-withstand properties. In particular, a two-minute processing time seemed sufficient to provide the electrical isolation required in photovoltaic concentrator application applications. Even though electrophoretic coatings did not seem to fill voids in porous-anodized aluminum substrates, breakdown voltages generally exceeded hi-pot pass-fail voltage levels with a comfortable margin. 6 refs, 11 figs, 5 tabs.
Date:
October 1, 1992
Creator:
Sugimura, R. S.; Mon, G. R. & Ross, R. G. Jr.
System:
The UNT Digital Library
Thermoelectric material development. Final report
A search was made for improved TE materials that could have higher efficiency than state-of-the-art SiGe alloys used in Radioisotope Thermoelectric Generators. A new family of materials having the skutterudite structure was identified (cubic space group Im3, formula (Fe, Co, Ni)As{sub 3}). Properties of n-type IrSb{sub 3}, CoSb{sub 3}, and their solid solutions were investigated. Pt, Te, Tl, and In were used as dopants. The thermal conductivity was reduced by about 70% for the solid solutions vs the binary compounds. A maximum ZT of about 0.36 was measured on Co-rich solid solutions which is 160% improved over that of the binary compounds.
Date:
October 1, 1994
Creator:
Vandersande, J.W.; Allevato, C. & Caillat, T.
System:
The UNT Digital Library