Nanocomposites with expandable smectites such as montmorillonite layered silicates (MLS) in polymer matrices have attracted extensive application interest. Numerous MLS concentrations have been used with no particular justification. Here, we investigate the effects of MLS dispersion within the matrix and on mechanical performance. The latter is resolved through a three-prong investigation on rate dependent tensile results, time dependent creep results and the influence of a sharp notch in polypropylene (PP) nanocomposites. A fixed concentration of maleated polypropylene (mPP) was utilized as a compatibilizer between the MLS and non-polar PP. Analysis of transmission electron micrographs and X-ray diffraction patterns on the surface and below the surface of our samples revealed a unique skin-core effect induced by the presence of clay. Differential scanning calorimetric and polarized optical microscopic examination of spherulites sizes showed changes in nucleation and growth resulting from both the maleated PP compatibilizer and the MLS. These structural changes resulted in a tough nanocomposite, a concept not reported before in the PP literature. Nonlinear creep analysis of the materials showed two concentrations 3 and 5 % wt of PP, which reduced the compliance in the base PP. The use of thermal wave imaging allowed the identification of ductile failure among …

This problem in lieu of thesis report presents a study on gate electrode materials on high K dielectrics, including poly-SiGe and Ru. The stability of poly-SiGe in direct contact with Hf silicon-oxynitride (HfSiON) is studied by rapid thermal annealing (RTA), Rutherford backscattering spectrometry (RBS), X-ray photoelectron spectroscopy (XPS) and high resolution transmission electron microscopy (HRTEM). By performing a series of RTA treatments we found that as RTA thermal budgets reach 1050 C for 30s, the poly-SiGe layer begins to intermix with the HfSiON film, as observed by TEM. The maximum annealing condition for the Hf0.14Si0.23O0.46N0.17 film to remain stable in contact with poly-SiGe is 1050 C for 20s in high purity N2(99.9%) ambient. We also found that after 1000 C annealing for 60s in a nitrogen ambient, the poly-SiGe crystal phase structure was changed from a columnar structure to a large grain structure. For a metal gate, Ru was studied to determine N2annealing effects on sheet resistance of Ru sample electrodes and electrical characterization of Ru/HfSiOx/Si stack. Results show that a pure Ru metal gate is not a good choice for high k materials since it is hard to etch off, and different annealing conditions can cause large changes in …