Anomalous Hall behavior of HgCdTe refers to a "double cross-over" feature of the Hall coefficient in p-type material, or a peak in the Hall mobility or Hall coefficient in n-type material. A magnetoconductivity tensor approach was utilized to identify presence of two electrons contributing to the conduction as well as transport properties of each electron in the material. The two electron model for the mobility shows that the anomalous Hall behavior results from the competition of two electrons, one in the energy gap graded region near the CdZnTe/HgCdTe interface with large band gap and the other in the bulk of the LPE film with narrow band gap. Hg0.78Cd0.22Te samples grown by LPE on CdZnTe(111B)-oriented substrates were exposed to various doses of thermal neutrons (~1.7 x 1016 - 1.25 x 1017 /cm2) and subsequently annealed at ~220oC for ~24h in Hg saturated vapor to recover damage and reduce the presence of Hg vacancies. Extensive Magnetotransport measurements were performed on these samples. SIMS profile for impurities produced by neutron irradiation was also obtained. The purpose for this study is to investigate the influence of neutron irradiation on this material as a basis for further study on HgCdTe74Se. The result shows that total …

The modification of the band edge or emission energy of semiconductor quantum well light emitters due to image charge induced phenomenon is an emerging field of study. This effect observed in quantum well light emitters is critical for all metal-optics based light emitters including plasmonics, or nanometallic electrode based light emitters. This dissertation presents, for the first time, a systematic study of the image charge effect on semiconductor–metal systems. the necessity of introducing the image charge interactions is demonstrated by experiments and mathematical methods for semiconductor-metal image charge interactions are introduced and developed.

In the present investigation, zinc was plated onto a cadmium crystal to determine the effect on the scattering parameter.

This thesis examines temperature dependence of magnetic susceptibility of the organic free radical galvinoxyl.

The effects of surface plasmon for InGaN/GaN multi-quantum wells and ZnO nanoparticles optical linear and nonlinear emission efficiency had been experimentally studied. Due to the critical design for InGaN MQWs with inverted hexagonal pits based on GaN, both contribution of surface plasmon effect and image charge effect at resonant and off resonant frequencies were experimentally and theoretically investigated. With off- resonant condition, the InGaN MQWs emission significantly enhanced by metal nanoparticles. This enhancement was caused by the image charge effect, due to the accumulation of carriers to NPs region. When InGaN emission resonated with metal particles SP modes, surface Plasmon effect dominated the emission process. We also studied the surface plasmon effect for ZnO nanoparticles nonlinear optical processes, SHG and TPE. Defect level emission had more contribution at high incident intensity. Emissions are different for pumping deep into the bulk and near surface. A new assumption to increase the TPE efficiency was studied. We thought by using Au nanorods localized surface plasmon mode to couple the ZnO virtual state, the virtual state’s life time would be longer and experimentally lead the emission enhancement. We studied the TPE phenomena at high and near band gap energy. Both emission intensity and decay …

The experiments to be described here were undertaken for the purpose of determining, if possible, by NMR techniques whether or not the hydroxyl protons in mica are bound in a regular crystalline array, and, if so, whether or not the hydroxyl protons occur in reasonably isolated pairs as in waters of hydration.

Electron-ion recombination has been under study for many years, but comparisons between theory and experiment have been very difficult, especially for conditions where the ion under evaluation was a minority in concentration. This study describes a direct measurement of the recombination-rate coefficient for the recombination of minority as well as majority ions in the afterglow.

The electrical and optical properties of boron doped hydrogenated amorphous silicon thin films (a-Si) were investigated to determine the effect of boron and hydrogen incorporation on carrier transport. The a-Si thin films were grown by plasma enhanced chemical vapor deposition (PECVD) at various boron concentrations, hydrogen dilutions, and at differing growth temperatures. The temperature dependent conductivity generally follows the hopping conduction model. Above a critical temperature, the dominant conduction mechanism is Mott variable range hopping conductivity (M-VRH), where p = ¼, and the carrier hopping depends on energy. However, at lower temperatures, the coulomb interaction between charge carriers becomes important and Efros-Shklosvkii variable hopping (ES-VRH) conduction, where p=1/2, must be included to describe the total conductivity. To correlate changes in electrical conductivity to changes in the local crystalline order, the transverse optical (TO) and transverse acoustic (TA) modes of the Raman spectra were studied to relate changes in short- and mid-range order to the effects of growth temperature, boron, and hydrogen incorporation. With an increase of hydrogen and/or growth temperature, both short and mid-range order improve, whereas the addition of boron results in the degradation of short range order. It is seen that there is a direct correlation between the …

Semiconductor based micro- and nano-structures grown in a systematic and controlled way using selective area growth are emerging as a promising route toward devices for integrated optical circuitry in optoelectronics and photonics field. This dissertation focuses on the experimental investigation of the nonlinear optical effects in selectively grown gallium nitride micro-pyramids that act as optical cavities, zinc oxide submicron rods and indium gallium nitride multiple quantum well core shell submicron tubes on the apex of GaN micro pyramids that act as optical antennae. Localized spatial excitation of these low dimensional semiconductor structures was optimized for nonlinear optical light (NLO) generation due to second harmonic generation (SHG) and multi-photon luminescence (MPL). The evolution of both processes are mapped along the symmetric axis of the individual structures for multiple fundamental input frequencies of light. Effects such as cavity formation of generated light, electron-hole plasma generation and coherent emission are observed. The efficiency and tunability of the frequency conversion that can be achieved in the individual structures of various geometries are estimated. By controlling the local excitation cross-section within the structures along with modulation of optical excitation intensity, the nonlinear optical process generated in these structures can be manipulated to generate coherent light …

Intensive demands have arisen to characterize nonlinear optical properties of materials for applications involving optical limiters, waveguide switches and bistable light switches. The technique of Pulse Delay Modulation is described which can monitor nonlinear changes in transmission with shot noise limited signal-to-noise ratios even in the presence of large background signals. The theoretical foundations of the experiment are presented followed by actual measurements of beam depletion due to second harmonic generation in a LiIO3 crystal and two-photon absorption in the semiconductor ZnSe. Sensitivity to polarization rotation arising from the Kerr Effect in carbon disulfide, saturable absorber relaxation in modelocking dyes and photorefractive effects in ZnSe are demonstrated. The sensitivity of Pulse Delay Modulation is combined with Fabry-Perot enhancement to allow the measurement of two-photon absorption in a 0.46pm thick interference filter spacer layer. Also included is a study of nonlinear optical limiting arising from dielectric breakdown in gases.

In this dissertation work, the study focuses on large areal growth of MoS2 monolayers and a study of the structural, optical and electrical properties of such monolayers before and after transfer using a polymer-lift off technique. This work will discuss the issue of contact resistance and the effect of defects (both intrinsic and extrinsic) on the overall quality of the monolayer films. The significance of this dissertation work is that a reproducible strategy for monolayer MoS2 film growth and quantification of areal coverage as well as the detrimental effects of processing on device performance is presented.

Polymer gels undergo a volume phase transition in solvent in response to an infinitesimal environmental change. This remarkable phenomenon has resulted in many potential applications of polymer gels. The understanding of its mechanical properties has both scientific and technological importance. For this purpose, we have developed a novel method for measuring Poisson's ratio, which is one of the most important parameters determining the mechanical property of gels. Using this method, Poisson's ratio in N-isopropyacrylamide (NIPA) and polyacrylamide (PAAM) gels has been studied.

An optical detection technique is developed to detect and measure the resonant vibration of the cellular membrane. Biological membranes are active components of living cells and play a complex and dynamic role in life processes. They are believed to have oscillation modes of frequencies in the range of 1 to 1000 GHz. To measure such a high-frequency vibration, a linear laser cavity is designed to produce a train of femtosecond pulses of adjustable repetition rate. The method is then directly applied to liposomes, "artificial membrane", stained with a liphophilic potential sensitive dye. The spectral behavior of a selection of potential sensitive dyes in the membrane is also studied.

This dissertation is a collection of papers on anomalous phenomena in physics, biology, and sociology. These phenomena are primarily analyzed in terms of their temporal and spatiotemporal statistical properties. The analysis is based on both numerical simulations and, in some cases, real-world physiological and sociological data. The primary methods of analysis are diffusion entropy analysis, power spectral analysis, multifractal analysis, and survival (or waiting-time) analysis.

Fractional calculus enables the possibility of using real number powers or complex number powers of the differentiation operator. The fundamental connection between fractional calculus and subordination processes is explored and affords a physical interpretation for a fractional trajectory, that being an average over an ensemble of stochastic trajectories. With an ensemble average perspective, the explanation of the behavior of fractional chaotic systems changes dramatically. Before now what has been interpreted as intrinsic friction is actually a form of non-Markovian dissipation that automatically arises from adopting the fractional calculus, is shown to be a manifestation of decorrelations between trajectories. Nonlinear Langevin equation describes the mean field of a finite size complex network at criticality. Critical phenomena and temporal complexity are two very important issues of modern nonlinear dynamics and the link between them found by the author can significantly improve the understanding behavior of dynamical systems at criticality. The subject of temporal complexity addresses the challenging and especially helpful in addressing fundamental physical science issues beyond the limits of reductionism.

This thesis examines the properties of transmission and transport of light and charged particles in periodic or quasiperiodic systems of solid state and optics, especially the nonlinear and external field effects and the dynamic properties of these systems.

The experimental studies of this work were done using a microwave cavity spectrometer, Escherichia coli (E-coli) bacteria, and other peripheral equipment. The experiment consists of two steps. First, a general survey of frequencies from 8 GHz to 12 GHz was made. Second, a detailed experiment for specific frequencies selected from the first survey were further studied. Interesting frequency dependent results, such as unusually higher growing or killing rates of E-coli at some frequencies, were found. It is also concluded that some results are genetic, that is, the 2nd, and 3rd subcultures showed the same growing status as the 1st cultures.

Electronic transport properties have been used to classify and characterize materials and describe their functionality. Recent surge in computational power has enabled computational modelling and accelerated theoretical studies to complement and accelerate experimental discovery of novel materials. This work looks at methods for theoretical calculations of electronic transport properties and addresses the limitations of a common approximation in the calculation of these properties, namely, the constant relaxation time approximation (CRTA). This work takes a look at the limitations of this approximation and introduces energy and temperature dependent relaxation times. This study is carried out on models and real systems and compared with experiments.

The author explores absorptive and refractive optical nonlinearities at 1.06 [mu]m in bulk, semi-insulating, undoped GaAs with a particular emphasis on the influence of the native deep-level defect known as EL2. Picosecond pump-probe experimental technique is used to study the speed, magnitude, and origin of the absorptive and refractive optical nonlinearities and to characterize the dynamics of the optical excitation of EL2 in three distinctly different undoped, semi-insulating GaAs samples. Intense optical excitation of these materials leads to the redistribution of charge among the EL2 states resulting in an absorptive nonlinearity due to different cross sections for electron and hole generation through this level. This absorptive nonlinearity is used in conjunction with the linear optical properties of the material and independent information regarding the EL2 concentration to extract the cross section ratio [sigma][sub p]/[sigma][sub e] [approx equal]0.8, where [sigma][sub p](e) is the absorption cross section for hole (electron) generation from EL2[sup +] (EL2[sup 0]). The picosecond pump-probe technique can be used to determine that EL2/EL2[sup +]density ratio in an arbitrary undoped, semi-insulating GaAs sample. The author describes the use of complementary picosecond pump-probe techniques that are designed to isolate and quantify cumulative and instantaneous absorptive and refractive nonlinear processes. Numerical …

III-V nitrides have been put to use in a variety of applications including laser diodes for modern DVD devices and for solid-state white lighting. Plasmonics has come to the foreground over the past decade as a means for increasing the internal quantum efficiency (IQE) of devices through resonant interaction with surface plasmons which exist at metal/dielectric interfaces. Increases in emission intensity of an order of magnitude have been previously reported using silver thin-films on InGaN/GaN MQWs. the dependence on resonant interaction between the plasmons and the light emitter limits the applications of plasmonics for light emission. This dissertation presents a new non-resonant mechanism based on electrostatic interaction of carriers with induced image charges in a nearby metallic nanoparticle. Enhancement similar in strength to that of plasmonics is observed, without the restrictions imposed upon resonant interactions. in this work we demonstrate several key features of this new interaction, including intensity-dependent saturation, increase in the radiative recombination lifetime, and strongly inhomogeneous light emission. We also present a model for the interaction based on the aforementioned image charge interactions. Also discussed are results of work done in the course of this research resulting in the development of a novel technique for strain measurement …

In this dissertation, I am presenting my research on the fabrication and simulation of the optical properties of 3D photonic crystals and 2D graded photonic super-crystals. The 3D photonic crystals were fabricated using holographic lithography with a single, custom-built reflective optical element (ROE) and single exposure from a visible light laser. Fully 3D photonic crystals with 4-fold, 5- fold, and 6-fold symmetries were fabricated using the flexible, 3D printed ROE. In addition, novel 2D graded photonic super-crystals were fabricated using a spatial light modulator (SLM) in a 4f setup for pixel-by-pixel phase engineering. The SLM was used to control the phase and intensity of sets of beams to fabricate the 2D photonic crystals in a single exposure. The 2D photonic crystals integrate super-cell periodicities with 4-fold, 5-fold, and 6-fold symmetries and a graded fill fraction. The simulations of the 2D graded photonic super-crystals show extraordinary properties such as full photonic band gaps and cavity modes with Q-factors of ~106. This research could help in the development of organic light emitting diodes, high-efficiency solar cells, and other devices.

Performance and reliability of solid state laser diodes in the IR region exceeds those in the visible and UV part of the light spectrum. Single frequency visible and UV laser diodes with higher than 500 mW power are not available commercially. However we successfully stabilized a multi-longitudinal mode IR laser to 860 mW single frequency. This means high efficiency harmonic generation using this laser can produce visible and UV laser light not available otherwise. In this study we examined three major leading nonlinear crystals: PPMgO:SLN, PPKTP and PPMgO:SLT to generate blue light by second harmonic generation. We achieved record high net conversion efficiencies 81.3% using PPMgO:SLT (~500 mW out), and 81.1% using PPKTP (~700 mW out). In both these cases an external resonance buildup cavity was used. We also studied a less complicated single pass waveguide configuration (guided waist size of ~ 5 um compared to ~60 um) to generate blue. With PPMgO:SLN we obtained net 40.4% and using PPKT net 6.8% (110mW and 10.1 mW respectively).

The influence of uniaxial compression upon the Hall effect ad resistivity of cadmium-doped samples of InSb at 77 K, 64 K, and 12 K are reported. Unilaxial compressions as high as 6 kbar were applied to samples oriented in the {001} and {110} directions. The net hole concentration of the samples were about 5x10^13 cm^-3 at 77 K as determined from the Hall coefficient at 24 kilogauss. The net concentration of hole carriers decreases and then increases exponentially with stress at 77 k and 64 k, while at 12 k there is only a monotonic increase of carrier concentration with stress. Analysis of the hole concentration as a function of stress shows the presence of a deep acceptor level located about 90 meV above the valence band edge in additionb to the 10 meV vadmium acceptor level. The shallow acceptor level does not split with stress. The hole density data is represented very well by models which describe both the variation in the net density of states and motion of the acceptor levels as a function of stress.

The interaction of active molybdenum field emission microcathode arrays with oxygen, water, carbon dioxide, methane, hydrogen and helium gases was studied. Experiments were setup to measure the emission characteristics as a function of gas exposures. The resulting changes in the surface work function of the tips were determined from the Fowler-Nordheim plots. The kinetics of the FEA-gas interaction were studied by observing the ion species originating from the array during and after gas exposures with a high resolution quadrupole mass spectrometer. With the work function data and the mass spectrometry information, the mechanisms responsible for emission degradation and subsequent device recovery after exposures have been determined. The data obtained was used in estimating the device lifetimes under various vacuum environments. Also it was found that the gas exposure effects are similar in dc and pulsed modes of operation of the arrays, thus permitting the use of dc mode testing as an effective acceleration method in establishing the device lifetimes under various vacuum conditions. The vacuum conditions required for the long term emission current stability and reliability of vacuum microelectronic devices employing FEAs are established. Exposure of Mo field emitter arrays to oxygen bearing species like oxygen, water and carbon dioxide …