Ion Beam Synthesis of Binary and Ternary Transition Metal Silicide Thin Films (open access)

Ion Beam Synthesis of Binary and Ternary Transition Metal Silicide Thin Films

Among the well-known methods to form or modify the composition and physical properties of thin films, ion implantation has shown to be a very powerful technique. In particular, ion beam syntheses of binary iron silicide have been studied by several groups. Further, the interests in transition metal silicide systems are triggered by their potential use in advanced silicon based opto-electronic devices. In addition, ternary silicides have been by far less studied than their binary counterparts despite the fact that they have interesting magnetic and electronic properties. In this study, we investigate ion beam synthesis of Fe-Si binary structures and Fe-Co-Si ternary structures. This work involves fundamental investigation into development of a scalable synthesis process involving binary and ternary transitional metal silicide thin films and Nano-structures using low energy ion beams. Binary structures were synthesized by implanting Fe- at 50 keV energy. Since ion implantation is a dynamic process, Dynamic simulation techniques were used in these studies to determine saturation fluences for ion implantation. Also, static and dynamic simulation results were compared with experimental results. The outcome of simulations and experimental results indicate, dynamic simulation codes are more suitable than static version of the TRIM to simulate high fluence, low energy …
Date: December 2016
Creator: Lakshantha, Wickramaarachchige Jayampath
System: The UNT Digital Library
Ion Beam Synthesis of Carbon Assisted Nanosystems in Silicon Based Substrates (open access)

Ion Beam Synthesis of Carbon Assisted Nanosystems in Silicon Based Substrates

The systematic study of the formation of β-SiC formed by low energy carbon ion (C-)implantation into Si followed by high temperature annealing is presented. The research is performed to explore the optimal annealing conditions. The formation of crystalline β-SiC is clearly observed in the sample annealed at 1100 °C for a period of 1 hr. Quantitative analysis is performed in the formation of β-SiC by the process of implantation of different carbon ion fluences of 1×1017, 2×1017, 5×1017, and 8×1017 atoms /cm2 at an ion energy of 65 keV into Si. It is observed that the average size of β-SiC crystals decreased and the amount of β-SiC crystals increased with the increase in the implanted fluences when the samples were annealed at 1100°C for 1 hr. However, it is observed that the amount of β-SiC linearly increased with the implanted fluences up to 5×1017 atoms /cm2. Above this fluence the amount of β-SiC appears to saturate. The stability of graphitic C-C bonds at 1100°C limits the growth of SiC precipitates in the sample implanted at a fluence of 8×1017 atoms /cm2 which results in the saturation behavior of SiC formation in the present study. Secondly, the carbon cluster formation process …
Date: May 2011
Creator: Poudel, Prakash Raj
System: The UNT Digital Library
Design, Construction, and Application of an Electrostatic Quadrupole Doublet for Heavy Ion Nuclear Microprobe Research (open access)

Design, Construction, and Application of an Electrostatic Quadrupole Doublet for Heavy Ion Nuclear Microprobe Research

A nuclear microprobe, typically consisting of 2 - 4 quadrupole magnetic lenses and apertures serving as objective and a collimating divergence slits, focuses MeV ions to approximately 1 x 1 μm for modification and analysis of materials. Although far less utilized, electrostatic quadrupole fields similarly afford strong focusing of ions and have the added benefit of doing so independent of ion mass. Instead, electrostatic quadrupole focusing exhibits energy dependence on focusing ions. A heavy ion microprobe could extend the spatial resolution of conventional microprobe techniques to masses untenable by quadrupole magnetic fields. An electrostatic quadrupole doublet focusing system has been designed and constructed using several non-conventional methods and materials for a wide range of microprobe applications. The system was modeled using the software package "Propagate Rays and Aberrations by Matrices" which quantifies system specific parameters such as demagnification and intrinsic aberrations. Direct experimental verification was obtained for several of the parameters associated with the system. Details of the project and with specific applications of the system are presented.
Date: December 2017
Creator: Manuel, Jack Elliot
System: The UNT Digital Library
Nanoscale Materials Applications: Thermoelectrical, Biological, and Optical Applications with Nanomanipulation Technology (open access)

Nanoscale Materials Applications: Thermoelectrical, Biological, and Optical Applications with Nanomanipulation Technology

In a sub-wavelength scale, even approaching to the atomic scale, nanoscale physics shows various novel phenomena. Since it has been named, nanoscience and nanotechnology has been employed to explore and exploit this small scale world. For example, with various functionalized features, nanowire (NW) has been making its leading position in the researches of physics, chemistry, biology, and engineering as a miniaturized building block. Its individual characteristic shows superior and unique features compared with its bulk counterpart. As one part of these research efforts and progresses, and with a part of the fulfillment of degree study, novel methodologies and device structures in nanoscale were devised and developed to show the abilities of high performing thermoelectrical, biological, and optical applications. A single β-SiC NW was characterized for its thermoelectric properties (thermal conductivity, Seebeck coefficient, and figure of merit) to compare with its bulk counterpart. The combined structure of Ag NW and ND was made to exhibit its ability of clear imaging of a fluorescent cell. And a plasmonic nanosture of silver (Ag) nanodot array and a β-SiC NW was fabricated to show a high efficient light harvesting device that allows us to make a better efficient solar cell. Novel nanomanipulation techniques were …
Date: August 2011
Creator: Lee, Kyung-Min
System: The UNT Digital Library
The Effects of Residual Gases on the Field Emission Properties of ZnO, GaN, ZnS Nanostructures, and the Effects of Light on the Resistivity of Graphene (open access)

The Effects of Residual Gases on the Field Emission Properties of ZnO, GaN, ZnS Nanostructures, and the Effects of Light on the Resistivity of Graphene

In this dissertation, I present that at a vacuum of 3×10-7 Torr, residual O2, CO2, H2 and Ar exposure do not significantly degrade the field emission (FE) properties of ZnO nanorods, but N2 exposure significantly does. I propose that this could be due to the dissociation of N2 into atomic nitrogen species and the reaction of such species with ZnO. I also present the effects of O2, CO2, H2O, N2, H2, and Ar residual gas exposure on the FE properties of GaN and ZnS nanostructure. A brief review of growth of ZnO, GaN and ZnS is provided. In addition, Cs deposition on GaN nanostructures at ultra-high vacuum results in 30% decrease in turn-on voltage and 60% in work function. The improvement in FE properties could be due to a Cs-induced space-charge layer at the surface that reduces the barrier for FE and lowers the work function. I describe a new phenomenon, in which the resistivity of CVD-grown graphene increases to a higher saturated value under light exposure, and depends on the wavelength of the light—the shorter the wavelength, the higher the resistivity. First-principle calculations and theoretical analysis based on density functional theory show that (1) a water molecule close to …
Date: May 2014
Creator: Mo, Yudong
System: The UNT Digital Library