The systematic study of the formation of β-SiC formed by low energy carbon ion (C-)implantation into Si followed by high temperature annealing is presented. The research is performed to explore the optimal annealing conditions. The formation of crystalline β-SiC is clearly observed in the sample annealed at 1100 °C for a period of 1 hr. Quantitative analysis is performed in the formation of β-SiC by the process of implantation of different carbon ion fluences of 1×1017, 2×1017, 5×1017, and 8×1017 atoms /cm2 at an ion energy of 65 keV into Si. It is observed that the average size of β-SiC crystals decreased and the amount of β-SiC crystals increased with the increase in the implanted fluences when the samples were annealed at 1100°C for 1 hr. However, it is observed that the amount of β-SiC linearly increased with the implanted fluences up to 5×1017 atoms /cm2. Above this fluence the amount of β-SiC appears to saturate. The stability of graphitic C-C bonds at 1100°C limits the growth of SiC precipitates in the sample implanted at a fluence of 8×1017 atoms /cm2 which results in the saturation behavior of SiC formation in the present study. Secondly, the carbon cluster formation process …

I have conducted detailed experimental and theoretical studies of the nonlinear optical properties of semiconductor materials useful for optical limiting. I have constructed optical limiters utilizing two-photon absorption along with photogenerated carrier defocusing as well as the bound electronic nonlinearity using the semiconducting material ZnSe. I have optimized the focusing geometry to achieve a large dynamic range while maintaining a low limiting energy for the device. The ZnSe monolithic optical limiter has achieved a limiting energy as low as 13 nJ (corresponding to 300W peak power) and a dynamic range as large as 105 at 532 nm using psec pulses. Theoretical analysis showed that the ZnSe device has a broad-band response covering the wavelength range from 550 nm to 800 nm. Moreover, I found that existing theoretical models (e.g. the Auston model and the band-resonant model using Boltzmann statistics) adequately describe the photo-generated carriers refractive nonlinearity in ZnSe. Material nonlinear optical parameters, such as the two-photon absorption coefficient β_2=5.5cm/GW, the refraction per unit carrier density σ_n=-0.8∗10^-21cm^3 and the bound electronic refraction n_2=-4∗10^-11esu, have been measured via time-integrated beam distortion experiments in the near field. A numerical code has been written to simulate the beam distortion in order to extract the …

The developments of nuclear medicine lead to an increasing demand for the production of radioisotopes with suitable nuclear and chemical properties. Furthermore, from the literature it is evident that the production of radioisotopes using charged-particle accelerators instead of nuclear reactors is gaining increasing popularity. The main advantages of producing medical isotopes with accelerators are carrier free radionuclides of short lived isotopes, improved handling, reduction of the radioactive waste, and lower cost of isotope fabrication. Proton-rich isotopes are the result of nuclear interactions between enriched stable isotopes and energetic protons. An interesting observation is that during the production of proton-rich isotopes, fast and intermediately fast neutrons from nuclear reactions such as (p,xn) are also produced as a by-product in the nuclear reactions. This observation suggests that it is perhaps possible to use these neutrons to activate secondary targets for the production of neutron-rich isotopes. The study of secondary radioisotope production with fast neutrons from (p,xn) reactions using a particle accelerator is the main goal of the research in this thesis.

Opto-electronic semiconductor technology continues to grow at an accelerated pace, as the industry seeks to perfect devices such as light emitting diodes for purposes of optical processing and communication. A strive for greater efficiency with shrinking device dimensions, continually pushes the technology from both a design and materials aspect. Nanosystems such a quantum dots, also face new material engineering challenges as they enter the realm of quantum mechanics, with each system and material having markedly different electronic properties. Traditionally, the semiconductor industry has focused on materials such Group II-VI and III-V compounds as the basis material for future opto-electronic needs. Unfortunately, these material systems can be expensive and have difficulties integrating into current Si-based technology. The industry is reluctant to leave silicon due in part to silicon's high quality oxide, and the enormous amount of research invested into silicon based circuit fabrication. Although recently materials such as GaN are starting to dominate the electro-optical industry since a Si-based substitute has not been found. The purpose of the dissertation was to examine several promising systems that could be easily integrated into current Si-based technology and also be produced using simple inexpensive fabrication techniques such ion implantation. The development of optically active …

Ion induced charge collection dynamics within Integrated Circuits (ICs) is important due to the presence of ionizing radiation in the IC environment. As the charge signals defining data states are reduced by voltage and area scaling, the semiconductor device will naturally have a higher susceptibility to ionizing radiation induced effects. The ionizing radiation can lead to the undesired generation and migration of charge within an IC. This can alter, for example, the memory state of a bit, and thereby produce what is called a "soft" error, or Single Event Upset (SEU). Therefore, the response of ICs to natural radiation is of great concern for the reliability of future devices. Immunity to soft errors is listed as a requirement in the 1997 National Technology Roadmap for Semiconductors prepared by the Semiconductor Industry Association in the United States. To design more robust devices, it is essential to create and test accurate models of induced charge collection and transport in semiconductor devices. A heavy ion microbeam produced by an accelerator is an ideal tool to study charge collection processes in ICs and to locate the weak nodes and structures for improvement through hardening design. In this dissertation, the Ion Beam Induced Charge Collection …

As electronic devices became smaller, interest in quantum-confined semiconductor nanostructures increased. Self-assembled mesoscale semiconductor structures of II-VI nanocrystals are an especially exciting subject because of their controllable band gap and unique photophysical properties. Several preparative methods to synthesize and control the sizes of the individual nanocrystallites and the electronic and optical properties have been intensively studied. Fabrication of patterned nanostructures composed of quantum-confined nanoparticles is the next step toward practical applications. We have developed an innovative method to fabricate diverse nanostructures which relies on the size and a shape of a chosen deoxyribonucleic acid (DNA) template.

In this dissertation, I present that at a vacuum of 3×10-7 Torr, residual O2, CO2, H2 and Ar exposure do not significantly degrade the field emission (FE) properties of ZnO nanorods, but N2 exposure significantly does. I propose that this could be due to the dissociation of N2 into atomic nitrogen species and the reaction of such species with ZnO. I also present the effects of O2, CO2, H2O, N2, H2, and Ar residual gas exposure on the FE properties of GaN and ZnS nanostructure. A brief review of growth of ZnO, GaN and ZnS is provided. In addition, Cs deposition on GaN nanostructures at ultra-high vacuum results in 30% decrease in turn-on voltage and 60% in work function. The improvement in FE properties could be due to a Cs-induced space-charge layer at the surface that reduces the barrier for FE and lowers the work function. I describe a new phenomenon, in which the resistivity of CVD-grown graphene increases to a higher saturated value under light exposure, and depends on the wavelength of the light—the shorter the wavelength, the higher the resistivity. First-principle calculations and theoretical analysis based on density functional theory show that (1) a water molecule close to …

I present spectroscopic measurements for 260 sources from the Gemini Near Infrared Spectrograph–Distant Quasar Survey (GNIRS-DQS). Being the largest uniform, homogeneous survey of its kind, it represents a flux-limited sample of Sloan Digital Sky Survey (SDSS) quasars at 1.5 < z < 3.5. A combination of the GNIRS and SDSS spectra covers principal quasar diagnostic features, chiefly the C IV λ1549, Mg II λλ2798, 2803, Hβ λ4861, and [O III] λλ4959, 5007 emission lines, in each source. The spectral inventory is utilized primarily to develop prescriptions for obtaining more accurate and precise redshifts, black hole masses, and accretion rates for all quasars. Additionally, the measurements facilitate an understanding of the dependence of rest-frame ultraviolet–optical spectral properties of quasars on redshift, luminosity, and Eddington ratio, and test whether the physical properties of the quasar central engine evolve over cosmic time.

In this dissertation work, the study focuses on large areal growth of MoS2 monolayers and a study of the structural, optical and electrical properties of such monolayers before and after transfer using a polymer-lift off technique. This work will discuss the issue of contact resistance and the effect of defects (both intrinsic and extrinsic) on the overall quality of the monolayer films. The significance of this dissertation work is that a reproducible strategy for monolayer MoS2 film growth and quantification of areal coverage as well as the detrimental effects of processing on device performance is presented.