Charged Particle Transport and Confinement Along Null Magnetic Curves and in Various Other Nonuniform Field Configurations for Applications in Antihydrogen Production (open access)

Charged Particle Transport and Confinement Along Null Magnetic Curves and in Various Other Nonuniform Field Configurations for Applications in Antihydrogen Production

Comparisons between measurements of the ground-state hyperfine structure and gravitational acceleration of hydrogen and antihydrogen could provide a test of fundamental physical theories such as CPT (charge conjugation, parity, time-reversal) and gravitational symmetries. Currently, antihydrogen traps are based on Malmberg-Penning traps. The number of antiprotons in Malmberg-Penning traps with sufficiently low energy to be suitable for trappable antihydrogen production may be reduced by the electrostatic space charge of the positrons and/or collisions among antiprotons. Alternative trap designs may be needed for future antihydrogen experiments. A computational tool is developed to simulate charged particle motion in customizable magnetic fields generated by combinations of current loops and current lines. The tool is used to examine charged particle confinement in two systems consisting of dual, levitated current loops. The loops are coaxial and arranged to produce a magnetic null curve. Conditions leading to confinement in the system are quantified and confinement modes near the null curve and encircling one or both loops are identified. Furthermore, the tool is used to examine and quantify charged particle motion parallel to the null curve in the large radius limit of the dual, levitated current loops. An alternative to new trap designs is to identify the effects …
Date: May 2016
Creator: Lane, Ryan A.
System: The UNT Digital Library
Optical Nonlinearities in Semiconductors for Limiting (open access)

Optical Nonlinearities in Semiconductors for Limiting

I have conducted detailed experimental and theoretical studies of the nonlinear optical properties of semiconductor materials useful for optical limiting. I have constructed optical limiters utilizing two-photon absorption along with photogenerated carrier defocusing as well as the bound electronic nonlinearity using the semiconducting material ZnSe. I have optimized the focusing geometry to achieve a large dynamic range while maintaining a low limiting energy for the device. The ZnSe monolithic optical limiter has achieved a limiting energy as low as 13 nJ (corresponding to 300W peak power) and a dynamic range as large as 105 at 532 nm using psec pulses. Theoretical analysis showed that the ZnSe device has a broad-band response covering the wavelength range from 550 nm to 800 nm. Moreover, I found that existing theoretical models (e.g. the Auston model and the band-resonant model using Boltzmann statistics) adequately describe the photo-generated carriers refractive nonlinearity in ZnSe. Material nonlinear optical parameters, such as the two-photon absorption coefficient β_2=5.5cm/GW, the refraction per unit carrier density σ_n=-0.8∗10^-21cm^3 and the bound electronic refraction n_2=-4∗10^-11esu, have been measured via time-integrated beam distortion experiments in the near field. A numerical code has been written to simulate the beam distortion in order to extract the …
Date: May 1990
Creator: Wu, Yuan-Yen
System: The UNT Digital Library
Nonlinear Optical Absorption and Refraction Study of Metallophthalocyanine Dyes (open access)

Nonlinear Optical Absorption and Refraction Study of Metallophthalocyanine Dyes

This dissertation deals with the characterization of the nonlinear absorption and refraction of two representative metallophthalocyanine dyes: chloro aluminum phthalocyanine dissolved in methanol, referred to as CAP, and a silicon naphthalocyanine derivative dissolved in toluene, referred to as SiNc. Using the Z-scan technique, the experiments are performed on both the picosecond and nanosecond timescales at a wavelength of 0.532 μm.
Date: December 1992
Creator: Wei, Tai-Huei
System: The UNT Digital Library
Examination of Magnetic Plasma Expulsion (open access)

Examination of Magnetic Plasma Expulsion

Magnetic plasma expulsion uses a magnetic field distortion to redirect incident charged particles around a certain area for the purposes of shielding. Computational studies are carried out and for certain values of magnetic field, magnetic plasma expulsion is found to effectively shield a sizable area. There are however many plasma behaviors and interactions that must be considered. Applications to a new cryogenic antimatter trap design are discussed.
Date: May 2018
Creator: Phillips, Ryan Edward
System: The UNT Digital Library
Two Photon Resonant Picosecond Pulse Propagation in Lithium Vapor (open access)

Two Photon Resonant Picosecond Pulse Propagation in Lithium Vapor

The work of this dissertation has been to prove that the coherence of multiphoton excitation can be studied by an appropriately phased and time delayed sequence of pulses. An application of this fundamental study of coherence has been made for the enhancement of third harmonic generation. The coherent recovery of the energy lost to the two photon absorption process enalled a larger propagation distance for the fundamental than in an interaction which is incoherent or coherent, but not using a 90 degree phase shifted pulse pair. Phase matching over this longer propagation distance gave an enhancement of third harmonic generation.
Date: August 1987
Creator: Mukherjee, Anadi
System: The UNT Digital Library
Ion Beam Synthesis of Carbon Assisted Nanosystems in Silicon Based Substrates (open access)

Ion Beam Synthesis of Carbon Assisted Nanosystems in Silicon Based Substrates

The systematic study of the formation of β-SiC formed by low energy carbon ion (C-)implantation into Si followed by high temperature annealing is presented. The research is performed to explore the optimal annealing conditions. The formation of crystalline β-SiC is clearly observed in the sample annealed at 1100 °C for a period of 1 hr. Quantitative analysis is performed in the formation of β-SiC by the process of implantation of different carbon ion fluences of 1×1017, 2×1017, 5×1017, and 8×1017 atoms /cm2 at an ion energy of 65 keV into Si. It is observed that the average size of β-SiC crystals decreased and the amount of β-SiC crystals increased with the increase in the implanted fluences when the samples were annealed at 1100°C for 1 hr. However, it is observed that the amount of β-SiC linearly increased with the implanted fluences up to 5×1017 atoms /cm2. Above this fluence the amount of β-SiC appears to saturate. The stability of graphitic C-C bonds at 1100°C limits the growth of SiC precipitates in the sample implanted at a fluence of 8×1017 atoms /cm2 which results in the saturation behavior of SiC formation in the present study. Secondly, the carbon cluster formation process …
Date: May 2011
Creator: Poudel, Prakash Raj
System: The UNT Digital Library