Thermoplastic polyimides (TPIs) exhibit high glass transition temperatures (Tgs), which make them useful in high performance applications. Amorphous and semicrystalline TPIs show sub-Tg relaxations, which can aid in improving strength characteristics through energy absorption. The a relaxation of both types of TPIs indicates a cooperative nature. The semicrystalline TPI shows thermo-irreversible cold crystallization phenomenon. The polymer liquid crystal (PLC) used in the blends is thermotropic and with longitudinal molecular structure. The small heat capacity change (ACP) associated with the glass transition indicates the PLC to be rigid rod in nature. The PLC shows a small endotherm associated with the melting. The addition of PLC to the semicrystalline TPI does not significantly affect the Tg or the melting point (Tm). The cold crystallization temperature (Tc) increases with the addition of the PLC, indicating channeling phenomenon. The addition of PLC also causes a negative deviation of the ACP, which is another evidence for channeling. The TPI, PLC and their blends show high thermal stability. The semicrystalline TPI absorbs moisture; this effect decreases with the addition of the PLC. The absorbed moisture does not show any effect on the degradation. The addition of PLC beyond 30 wt.% does not result in an improvement …

In recent developments of composite materials, scientists and engineers have come up with fibers as well as matrices for composites and techniques of blending high cost components with low cost materials. Thus, one creates cost effective composite materials that are as efficient as space age components. One of the major breakthroughs in this area is the innovation of molecular composites, specifically polymeric liquid crystals (PLCs). These materials have excellent mechanical properties such as tensile impact and bending strength. They have excellent chemical resistance, low thermal expansivity, and low flammability. Their low viscosity leads to good processability One major setback in using space age composite technology in commercial applications is the price. Due to the complexity of processing, the cost of space composite materials is skyrocketing. To take the same concept of space age composite materials to create a more economical substitute has become a serious concern among scientists and engineers around the world. The two issues that will be resolved in this thesis are: (1) the potential impact of using PLCs (molecular reinforcement) can have on macro reinforced (heterogeneous composite, HC) long fiber systems; and (2) how strategic placement of the reinforcing layers can affect the macromechanical properties of the …

Hafnium and Zirconium based gate dielectrics are considered potential candidates to replace SiO2 or SiON as the gate dielectric in CMOS processing. Furthermore, the addition of nitrogen into this pseudo-binary alloy has been shown to improve their thermal stability, electrical properties, and reduce dopant penetration. Because CMOS processing requires high temperature anneals (up to 1050 °C), it is important to understand the diffusion properties of any metal associated with the gate dielectric in silicon at these temperatures. In addition, dopant penetration from the doped polysilicon gate into the Si channel at these temperatures must also be studied. Impurity outdiffusion (Hf, Zr) from the dielectric, or dopant (B, As, P) penetration through the dielectric into the channel region would likely result in deleterious effects upon the carrier mobility. In this dissertation extensive thermal stability studies of alternate gate dielectric candidates ZrSixOy and HfSixOy are presented. Dopant penetration studies from doped-polysilicon through HfSixOy and HfSixOyNz are also presented. Rutherford backscattering spectroscopy (RBS), heavy ion RBS (HI-RBS), x-ray photoelectron spectroscopy (XPS), high resolution transmission electron microscopy (HR-TEM), and time of flight and dynamic secondary ion mass spectroscopy (ToF-SIMS, D-SIMS) methods were used to characterize these materials. The dopant diffusivity is calculated by modeling …

Particle contamination control is a critical issue for the semiconductor industry. In the near future, this industry will be concerned with the chemical identities of contaminant particles as small as 0.01 pm in size. Therefore, analytical techniques with both high chemical sensitivity and spatial resolution are required. Transmission electron microscopy (TEM) provides excellent spatial resolution and yields structural and compositional information. It is rarely used, however, due to the difficulty of sample preparation. The goals of this research are to promote the use of TEM as an ultrafine particle analysis tool by developing new sample preparation methods, and to exploit the new TEM techniques for analysis of particles in semiconductor processing fluids. A TEM methodology for the analysis of particulate contaminants in fluids with an elemental detectability limit as low as 0.1 part per trillion (ppt), and a particle concentration detectability limit as low as 1 particle/ml for particles greater than 0.2 pm was developed and successfully applied to the analysis of particles in HF, H202, de-ionized (DI) water, and on the surface of an electronic device. HF samples from three manufacturers were examined. For HF (B), the maximum particle concentration was 8.3 x 103 particles/ml. Both a viscous material …