Projection Gas Immersion Laser Doping (P-GILD) is an innovative doping process that utilizes finely patterned excimer laser light to thermally process discreet regions within an integrated circuit. By reducing the total temperature cycle to nanoseconds and localizing the thermal energy in depth and area, P-GILD fundamentally changes the junction formation process. This paper first reviews the general characteristics of the P-GILD process and equipment. Two variations of the technique, melt and non-melt, and their resulting junction characteristics are then described in detail. The combination of the two laser processes along with the simplification that a resistless technology brings to the process sequence, enables efficient fabrication of impurity profiles that are ideal for a wide array of transistor applications.

The National Institute of Justice has tasked their Satellite Facility at Sandia National Laboratories and their Southeast Regional Technology Center in Charleston, South Carolina to devise new procedures and tools for helping correctional facilities to assess their security vulnerabilities. Thus, a team is visiting selected correctional facilities and performing vulnerability assessments. A vulnerability assessment helps to identi~ the easiest paths for inmate escape, for introduction of contraband such as drugs or weapons, for unexpected intrusion fi-om outside of the facility, and for the perpetration of violent acts on other inmates and correctional employees, In addition, the vulnerability assessment helps to quantify the security risks for the facility. From these initial assessments will come better procedures for performing vulnerability assessments in general at other correctional facilities, as well as the development of tools to assist with the performance of such vulnerability assessments.